Altum RF introduces 400-W S-band power amplifier MMIC
Altum RF has introduced in collaboration with TNO a 400-W S-band power amplifier MMIC, using NP45-11 technology from WIN Semiconductors. Operating between 2.8-3.3 GHz, this amplifier delivers an output power of 400 W and a PAE between 50-55% and is ideally suited for S-band radar applications. The WIN Semiconductors NP45-11 process is a 0.45 μm RF GaN-on-SiC HEMT technology manufactured with enhanced moisture protection, enabling the use of a plastic package.
Altum RF’s strategic relationship with TNO results in leading-edge RF to millimeter-wave products and technology for commercial markets and applications. This collaboration allows Altum RF to commercialize some of the unique technical capabilities of TNO, an industry-leading global research institute with an impressive history of innovation.
“The collaboration with these two outstanding organizations enables us to develop new, innovative technologies that significantly enhance performance capabilities for S-band radar,” stated Niels Kramer, Altum RF Managing Director Europe and Vice President Marketing. “We are looking forward to industrializing this innovative S-band technology, and we see this as a logical extension of our catalog. Altum RF continues its strategic focus to expand our product portfolio from X-band and beyond.”
“Building on more than 30 years of leading-edge phased-array HPA research, it is impressive to see the outstanding performance this S-band power amplifier can achieve, using WIN Semiconductors’ advanced GaN technology, and we are equally excited about the ability to commercialize it with Altum RF,” stated Kemo Agovic, market director Information and Sensor Systems at TNO.
David Danzilio, Senior Vice President, Technology and Strategic Marketing at WIN Semiconductors added, “WIN Semiconductors is pleased to support the commercialization of this S-band high power amplifier. Both Altum RF and TNO have extensive experience using WIN’s compound semiconductor technologies to achieve market leading performance.”