Acorn and UCLouvain collaborate on SOI research

November 17, 2021 // By Jean-Pierre Joosting
Acorn and UCLouvain collaborate on SOI research
Collaboration with leading professor on SOI technologies to explore the commercial potential of Acorn process manufacturing innovations in RF applications.

Acorn Technologies, an innovator in the semiconductor and telecommunications markets since 1998, has announced a research collaboration with Jean-Pierre Raskin, PhD, a full professor at the Université catholique de Louvain (UCLouvain), Belgium's largest French-speaking university. Acorn is funding a research project led by Professor Raskin to assess and quantify the performance potential of the company’s Acorn Buried Stressor (ABS) technology for RF SOI semiconductor manufacturing.

As today’s system and circuit designers approach the limits of Moore’s Law, Acorn is addressing some of the semiconductor industry’s most significant technology roadblocks through multiple commercialization programs. ABS is a proprietary semiconductor strain technology that boosts performance for both legacy and future fully depleted Silicon-on-Insulator (FD-SOI) devices.

FD-SOI technology is a planar process developed to shrink silicon geometries, improve performance and reduce power, thereby extending Moore's Law without requiring more complicated manufacturing processes. ABS extends the performance and efficiency of ultra-high frequency RF FD-SOI transistors that operate in the hundreds of gigahertz and are essential for 5G and future 6G communications devices. ABS can also be applied to Acorn’s patented germanium laser technology, which provides a silicon-compatible solution for monolithic photonics-on-a-chip to overcome performance-limiting interconnect bottlenecks that cause excessive power consumption.

“Acorn’s ABS technology holds great promise for the semiconductor industry as a novel technique for enhancing the performance of FD-SOI devices,” said Professor Jean-Pierre Raskin. “I look forward to working closely with Acorn’s engineering team as we evaluate and quantify the capabilities of ABS for potential commercial use in a wide range of RF applications.”

A world-renowned expert in RF and FD-SOI technologies, Professor Raskin has collaborated with many of the world’s top semiconductor companies in multiple research projects. He has pioneered important breakthroughs that have been adopted by the FD-SOI sector of the semiconductor industry as an alternative to FinFET technology, with a focus on low-power mobile chipsets used in smartphones and other mobile connected devices.


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