RF LDMOS power transistors drive efficiency

July 20, 2021 // By Jean-Pierre Joosting
RF LDMOS power transistors drive efficiency
Featuring high efficiency and low thermal resistance, these LDMOS power transistors are packaged to handle high RF power.

STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimized for RF power amplifiers in a variety of commercial and industrial applications.

Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a short conduction-channel length with a high breakdown voltage. These characteristics permit a cost-effective solution with low power consumption and high reliability.

Expanding the range of applications that can be addressed, the latest STPOWER LDMOS IDCH and IDDE series are 28-V/32-V common-source N-channel enhancement-mode lateral field-effect RF power transistors. IDCH devices provide output power from 8-W to 300-W and are specifically designed for applications up to 4 GHz, including 2.45 GHz industrial, scientific, and medical (ISM), wireless infrastructure, satellite communications, and avionics and radar equipment. The LDMOS devices are suitable for all types of modulation formats.

The IDDE series contains 10 W to 700 W devices for broadband commercial, industrial, and scientific applications at frequencies up to 1.5 GHz. The devices can withstand a load VSWR (voltage standing wave ratio) of 10:1, through all phases. They are suitable for all typical modulation formats, and for most classes of RF PA operation including Class A, Class AB, and Class C. Their high efficiency minimizes the energy needed to deliver the required output power, resulting in lower operating costs and reduced heat dissipation thereby simplifying thermal management and enabling more compact systems.


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